Charge Sensitive Preamplifier A250

STATE-OF-THE-ART


? External FET allows matching to detector
? FET can be cooled
? Noise at room temperature ~ 100 electrons RMS
? Low power (19 mW typical)


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產(chǎn)品詳情


Features
Applications
? Ultra low noise
? Aerospace
? Low power
? Nuclear physics
? Fast rise time (2.5 ns at 0 pF)
? Portable instrumentation
? External FET (allows selection or cooling)
? Nuclear monitoring
? Positive or negative signal processing
? Particle, gamma, and x-ray imaging
? Pin selectable gain
? Medical and nuclear electronics
? Small size (14 pin hybrid DIP)
? Electro-optical systems
? High reliability screening

? One year warranty

Overview
   The A250 is a hybrid state-of-the-art Charge Sensitive Preamplifier for use with a wide range of detectors having capacitance from lessthan one,to severalthousand picofarads.Such detectorsinclude silicon, CdTe, CZT,andHgI2 solid state detectors, proportional counters, photomultipliertubes, piezoelectric devices, photodiodes,CCD’s, and others.
   To permit optimization for a wide range of applications, the input field effect transistor is external to the package and user selectable.This feature is essential in applications where detector and FET must be cooled to reduce noise.In all applications, it allows the FET to be matched to the particular detector capacitance, as well as to noise and shaping requirements. In larger quantities, the A250 may be specially ordered with an internal FET.
   The noise performance of the A250 is such that its contribution to FET and detector noise is negligible in all charge amplifier applications, i.e., it is essentially an ideal amplifier in this respect.
   The internal feedback components configure the A250 as a charge amplifier; however, it may be used as a high performance current or voltage preamplifier by choice of suitable feedback components.

   While these preamps were designed for multidetector satellite instrumentation, their unique characteristics make them

equally useful in a broad range of laboratory and commercial applications.

Figure 1: Typical Application



A250 Specifications (Vs = ±6 V, T = 25 °C unloaded output)

INPUT CHARACTERISTICS
Sensitivity(Cf = 1 pF)
44 mV/MeV (Si)
55 mV/MeV (Ge)
36 mV/MeV (CdTe)
38 mV/MeV (HgI2)
1 V/pC
0.16 μV/electron
Sensitivity can be reduced by connecting Pin 2 and/or 3 to Pin 1, thus providing Cf = 3, 5, or 7 pF.Additional external capacitors can be added for further reduction of gain. In general,the sensitivity is given by A = 1/Cf (pF) V/pC.For silicon, the sensitivity is A = 44/Cf (pF) mV/MeV.
Noise
Input FET dependent.See Figure 2.
Noise slope
Input FET dependent.See Figure 2.
Data presented in Figure 2 is representative of results obtained with recommended FETs, and is characteristic of the FET and shaping time constants, rather than the A250, which is effectively noiseless.In general, the choice of input FET is basedon its noise voltage specification (ηV/√Hz) and its input capacitance (Ciss).For low capacitance detectors, a FET with small Ciss should be chosen, such as 2N4416 or 2SK152.For very high capacitance detectors, two or more matched high Ciss FETssuch asthe 2N6550 may be paralleled to achieve the best noise performance.
Dynamic Input Capacitance
>40,000 pF with two 2SK147 FETs and Cf = 5 pF
Polarity
Negative or positive
OUTPUT CHARACTERISTICS
Polarity
Inverse of input
Rise Time
2.5 ns at 0 pF input load with 2SK1524.5 ns at 100 pF input load with 2N6650 or 2SK152.See Figures 3 and 4.
Output Impedance
Pin 8: 100 Ω; Pin 9: < 10 Ω.
Integral Nonlinearity
< 0.03% for 0 to +2 V unloaded
< 0.006% for 0 to -2 V unloaded
Decay Time Constant
300 MΩ x Cf = 300 μs, 900 μs, 1.5 ms,2.1 ms.User selectable T=Rf Cf
Positive Clipping Level
> +2.8 V
Negative Clipping Level
< -4.6 V
GENERAL
Gain-Bandwidth Product
f T > 300 MHz with 2N4416 FET
f T > 1.5 GHz with two 2SK147 FETs See Figure 7.
Operating Voltage
±6 V, (±8 V maximum)
Operating Current
±1.2 mA plus the FET drain current (Ids).Where: Ids (mA) = 3/R (kΩ) - 0.25.As a special case, the internal 1 K resistor may be used for R, by connecting Pin 13 to 14, giving Ids = 2.75 mA.
Power Dissipation

14 mW + 6[Ids]

Variation of Sensitivity with SupplyVoltage
< 0.15%/V at ±6 V.
Temperature Stability
< 0.1% from 0 to +100 °C < 0.5% from -55 to +125 °C
Operating Temperature

-55 to +125 °C

Storage Temperature
-65 to + 150 °C
Screening
Amptek High Reliability
Package
14 Pin hybrid DIP (metal)
Weight
3.8 g
Warranty
One year
Test Board
PC-250
Options
RC Feedback Kit (1 GΩ resistor, 0.1 pF capacitor)Internal FET (consult factory) NASA GSFC S-311-P-698 screening Amptek High Reliability Screening
Other Configurations (Package)
A250F with internal FET (SIP Package)
A250F/NF with external FET (SIP Package)
Pin Configuration (14 pin hybrid DIP)
Pin 1
300 MΩ resistor in parallel with 1 pF feedback capacitor.
Connect this pin to the detector and the gate of the FET.
Pin 2
2 pF feedback tap
Pin 3
4 pF feedback tap
Pin 4
-6 V direct
Pin 5
-6 V through 50 Ω
Pin 6
Compensation (0 - 30 pF to ground) for low closed loop gain configuration
(where a large feedback capacitor is used together with small detector ca
pacitance).
Pin 7
Ground and case
Pin 8
Output through 100 Ω
Pin 9
Output direct
Pin 10
+6 V through 50 Ω
Pin 11
+6 V direct
Pin 12
Ground and case
Pin 13
Provide 2.75 mA drain current to the external FET by connecting Pin 13 to 14.(See operating current specifications.)
Pin 14
Input.Should be connected to the drain of the FET.This pin is held internally at+ 3 Volts.

A250 Specifications (con’t)
Figure 2: A250 Noise Characteristics


Noise as a function of detector capacitance, input FET, feedback capacitor, and shaping times


Figure 3: A250 Rise Time



Output rise time versus detector capacitance and FET
Figure 4: A250 Output Response



Output response with A250 configured as a charge sensitive preamplifier; 2SK152/3mA, Rf = 300 MΩ, Cf = 1 pF, Cd = 0 pF



Figure 5: A250 Output Response



Output response with A250 configured as a Transimpedance Amplifier (current to voltage); 2N4416/3mA, Rf = 60 kΩ,Cf = 0 pF, Cd = 0 pF
Figure 6: A250 Configured as a Low Noise Voltage Amplifier



Typical RF = 1M, RI = 10K; GAIN: Vo = VI(RF/RI)
Figure 7: A250 Small Signal Phase & Amplitude vs. Frequency



For low capacitance FET: 2N4416 (Ciss = 4 pF, Ids = 3 mA) 

For high capacitance FET: 2 x 2SK147 (Ciss = 180 pF, Ids =1.5 mA each)


Figure 8: A250 Connection Diagram



Figure 9: A250 Mechanical dimensions.


A250 Applications
Figure 10: A Two Detector Telescope System.



Figure 11: The A250 Connected to a Solid State Detector.



Figure 12: The A250 Connected to a Proportional Counter.



Figure 13: The A250 Connected to a DP5/PX5 DPP & MCA.



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